Glass Passivated Three-Phase Bridge Rectifier, 30A

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Glass Passivated Three-Phase Bridge Rectifier

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N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

N - CHANNEL 60V - 0.1Ω- 12A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on)= 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATOR

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

N - CHANNEL 60V - 0.1Ω- 12A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on)= 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATOR

N-CHANNEL 60V-0.1Q-12A TO-220 STripFET??MOSFET

N - CHANNEL 60V - 0.1Ω- 12A TO-220 STripFET™ MOSFET ■ TYPICAL RDS(on)= 0.1Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATOR

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 60V - 0.1W - 12A TO-220 STripFET™ POWER MOSFET

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifi

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

POWER FIELD EFFECT TRANSISTOR

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

Glass Passivated Three-Phase Bridge Rectifier

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High surge current capability

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Three-Phase Bridge Rectifier

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Three-Phase Bridge Rectifier

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Three-Phase Bridge Rectifier

文件：669.05 Kbytes Page：3 Pages

Three-Phase Bridge Rectifier

文件：669.05 Kbytes Page：3 Pages

Three-Phase Bridge Rectifier

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Three-Phase Bridge Rectifier

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桥式整流 三相桥式整流

桥式整流 三相桥式模组(50A△)

Three-Phase Bridge Rectifier

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Glass Passivated Three-Phase Bridge Rectifier

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Glass Passivated Three-Phase Bridge Rectifier

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Glass Passivated Three-Phase Bridge Rectifier

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Glass Passivated Three-Phase Bridge Rectifier 30A/1600V

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Glass Passivated Three-Phase Bridge Rectifier

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Glass Passivated Three-Phase Bridge Rectifier

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-24V P-CHANNEL Enhancement Mode MOSFET

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Power MOSFET

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Power MOSFET

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N-Channel 60 V (D-S) MOSFET

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N?묬hannel Power MOSFET

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N-Channel 60 V (D-S) MOSFET

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N-Channel 100-V (D-S) MOSFET

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P?묬hannel Power MOSFET

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P-Channel 60 V (D-S) MOSFET

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P?묬hannel Power MOSFET

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Glass Passivated Three-Phase Bridge Rectifier, 30A

文件：1.11779 Mbytes Page：3 Pages