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MTM55N10

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times

MOTOROLA

摩托罗拉

MTM55N10

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

55 and 60 AMPERE N-Channel TMOS POWER FETs rDS(on) = 0.04 OHM 80 and 100 VOLTS rDS(on) = 0.28 OHM 50 and 60 VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MTM55N10

N-CHANNEL TWOS POWER FETs

55 and 60 AMPERE N-Channel TMOS POWER FETs rDS(on) = 0.04 OHM 80 and 100 VOLTS rDS(on) = 0.28 OHM 50 and 60 VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MTM55N10

Trans MOSFET N-CH 950V 5A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

FAIRCHILD

仙童半导体

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

FAIRCHILD

仙童半导体

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

文件:75.94 Kbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MTM55N10产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -65°C

  • Maximum Power Dissipation:

    150000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    950V

  • Maximum Continuous Drain Current:

    5A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-8-3 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
25+
66880
原装正品,欢迎询价
MOTOROLA
23+
SMD
8650
受权代理!全新原装现货特价热卖!
MOTOROLA
24+
TO-3
2050
公司大量全新原装 正品 随时可以发货
TE/泰科
24+
10147
原厂现货渠道
TE/泰科
2608+
/
295898
一级代理,原装现货
MOTOROLA
专业铁帽
TO-3
1100
原装铁帽专营,代理渠道量大可订货
MOT
24+
138
25+
DIP40
3629
原装优势!房间现货!欢迎来电!
TE Connectivity
2022+
46
全新原装 货期两周
26+
DIP
255
现货供应

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