| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTM55N10 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times | MOTOROLA 摩托罗拉 | ||
MTM55N10 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR 55 and 60 AMPERE N-Channel TMOS POWER FETs rDS(on) = 0.04 OHM 80 and 100 VOLTS rDS(on) = 0.28 OHM 50 and 60 VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MTM55N10 | N-CHANNEL TWOS POWER FETs 55 and 60 AMPERE N-Channel TMOS POWER FETs rDS(on) = 0.04 OHM 80 and 100 VOLTS rDS(on) = 0.28 OHM 50 and 60 VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MTM55N10 | Trans MOSFET N-CH 950V 5A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | |||
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | |||
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 文件:75.94 Kbytes Page:8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
MTM55N10产品属性
- 类型
描述
- Minimum Operating Temperature:
-65°C
- Maximum Power Dissipation:
150000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
950V
- Maximum Continuous Drain Current:
5A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
25+ |
66880 |
原装正品,欢迎询价 |
||||
MOTOROLA |
23+ |
SMD |
8650 |
受权代理!全新原装现货特价热卖! |
|||
MOTOROLA |
24+ |
TO-3 |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
TE/泰科 |
24+ |
10147 |
原厂现货渠道 |
||||
TE/泰科 |
2608+ |
/ |
295898 |
一级代理,原装现货 |
|||
MOTOROLA |
专业铁帽 |
TO-3 |
1100 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOT |
24+ |
138 |
|||||
25+ |
DIP40 |
3629 |
原装优势!房间现货!欢迎来电! |
||||
TE Connectivity |
2022+ |
46 |
全新原装 货期两周 |
||||
26+ |
DIP |
255 |
现货供应 |
MTM55N10芯片相关品牌
MTM55N10规格书下载地址
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2019-4-9
DdatasheetPDF页码索引
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