FQB55N10价格

参考价格:¥5.2857

型号:FQB55N10TM 品牌:Fairchild 备注:这里有FQB55N10多少钱,2025年最近7天走势,今日出价,今日竞价,FQB55N10批发/采购报价,FQB55N10行情走势销售排行榜,FQB55N10报价。
型号 功能描述 生产厂家&企业 LOGO 操作
FQB55N10

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB55N10

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB55N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=55A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.026Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 55A, RDS(ON) = 16mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

CET

华瑞

Fast Switching Speed

文件:49.16 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced SGT technology

文件:1.7768 Mbytes Page:5 Pages

DOINGTER

杜因特

FQB55N10产品属性

  • 类型

    描述

  • 型号

    FQB55N10

  • 制造商

    Fairchild Semiconductor Corporation

  • 功能描述

    MOSFET N D2-PAK

  • 制造商

    Fairchild Semiconductor Corporation

  • 功能描述

    MOSFET, N, D2-PAK

  • 制造商

    Fairchild Semiconductor Corporation

  • 功能描述

    MOSFET, N, D2-PAK; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    55A; Drain Source Voltage

  • Vds

    100V; On Resistance

  • Rds(on)

    26mohm; Rds(on) Test Voltage

  • Vgs

    10V; Threshold Voltage Vgs

  • Typ

    4V; Power Dissipation

  • Pd

    155W ;RoHS

  • Compliant

    Yes

更新时间:2025-8-11 10:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
65200
ON/安森美
25+
SMD
8880
原装认准芯泽盛世!
FAIRCHILD/仙童
23+
TO-263
29600
一级分销商!
NK/南科功率
2025+
TO-263
986966
国产
FAIRCHILD
25+23+
TO263
10690
绝对原装正品全新进口深圳现货
on
23+
na
20000
FAIRCHILD/仙童
2022+
3090
全新原装 货期两周
FAIRCHILD/仙童
23+
TO-263
50000
全新原装正品现货,支持订货
on
24+
na
5000
十年沉淀唯有原装
FAIRCHILD/仙童
24+
TO-263
9000
只做原装,欢迎询价,量大价优

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