isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P08J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -8A RDS(O