| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
3 PHASE FULL WAVE BRIDGE RECTIFIER 3 PHASE FULL WAVE BRIDGE RECTIFIER(MTH200 - MTH800) | MICROSEMI 美高森美 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES rDS(on) = .0.8 OHMS 500 VOLTS | MOTOROLA 摩托罗拉 | | ||
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers. | MOTOROLA 摩托罗拉 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers. | MOTOROLA 摩托罗拉 | | ||
Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim | MOTOROLA 摩托罗拉 | | ||
3 Phase Full Wave Bridge Rectifer 文件：106.68 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS 文件：385.24 Kbytes Page：5 Pages | MOTOROLA 摩托罗拉 | | ||
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS | ETC 知名厂家 | ETC | | |
Power Field Effect Transistor | ETC 知名厂家 | ETC | | |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS 文件：385.24 Kbytes Page：5 Pages | MOTOROLA 摩托罗拉 | | ||
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate | ETC 知名厂家 | ETC | |
MTH8产品属性
- 类型
描述
- Minimum Operating Temperature：
-65ﾡC
- Maximum Power Dissipation：
180000mW
- Maximum Operating Temperature：
150ﾡC
- Maximum Gate Source Voltage：
ﾱ20V
- Maximum Drain Source Voltage：
900V
- Maximum Continuous Drain Current：
8A
- Material：
Si
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
MTH8规格书下载地址
MTH8参数引脚图相关
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MTH8数据表相关新闻
MTFDDAK480TDC-1AT1ZABYY
MTFDDAK480TDC-1AT1ZABYY
2026-6-4MTi-3-5A-DK
优势渠道
2023-10-25MTFDKBA800TFS-1BC1ZABYY 固能驱动 - SSD 7450 800GB M.2 E-SSD
MTFDKBA800TFS-1BC1ZABYY
2023-2-6MTK代理商 供应商MT7628AN MT7628NN MT7628DAN 原装现货
MT7628AN MT7628NN MT7628DAN
2021-8-29MTFDDAV256TBN-1AR1ZTAYY假一罚十
只做原装正品 ，欢迎来电咨询！
2020-12-9MTMC8E02LBF
MTMC8E02LBF，全新原装当天发货或门市自取0755-82732291，
2019-4-9
DdatasheetPDF页码索引
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