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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTH8N55 | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers. | MOTOROLA 摩托罗拉 |   | |
MTH8N55 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
MTH8N55 | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS | ETC 知名厂家 | ETC | |
Pigtailed PD for analog application 文件：250.67 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Pigtailed PD for analog application 文件：250.67 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Pigtailed PD for analog application 文件：250.67 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Pigtailed PD for analog application 文件：250.67 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
MTH8N55产品属性
- 类型
描述
- 型号
MTH8N55
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
N/A |
1452 |
MTH8N55规格书下载地址
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DdatasheetPDF页码索引
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