Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes Page：2 Pages

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

文件：70.77 Kbytes Page：2 Pages