| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTH6N60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
MTH6N60 | Power Field Effect Transistor 文件:91.92 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MTH6N60 | Power Field Effect Transistor 文件:91.92 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MTH6N60 | Trans MOSFET N-CH Si 600V 6A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MTH6N60 | Power Field Effect Transistor 文件:232.57 Kbytes Page:6 Pages | MOTOROLA 摩托罗拉 | ||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied | PHILIPS 飞利浦 |
MTH6N60产品属性
- 类型
描述
- Minimum Operating Temperature:
-65ᄀC
- Maximum Power Dissipation:
150000mW
- Maximum Operating Temperature:
150ᄀC
- Maximum Gate Source Voltage:
ᄆ20V
- Maximum Drain Source Voltage:
600V
- Maximum Continuous Drain Current:
6A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
26+ |
TO-218 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ON/安森美 |
23+ |
TO-3P |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
24+ |
N/A |
3400 |
||||
MOTOROLA/摩托罗拉 |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
ON/安森美 |
22+ |
TO-3P |
99448 |
MTH6N60芯片相关品牌
MTH6N60规格书下载地址
MTH6N60参数引脚图相关
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MTH6N60数据表相关新闻
MTFDDAK480TDC-1AT1ZABYY
MTFDDAK480TDC-1AT1ZABYY
2026-6-4MTi-3-5A-DK
优势渠道
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2023-2-6MTK代理商 供应商MT7628AN MT7628NN MT7628DAN 原装现货
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2021-8-29MTFDDAV256TBN-1AR1ZTAYY假一罚十
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2020-12-9MTMC8E02LBF
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2019-4-9
DdatasheetPDF页码索引
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