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MTH6N60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MTH6N60

Power Field Effect Transistor

文件:91.92 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MTH6N60

Power Field Effect Transistor

文件:91.92 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MTH6N60

Trans MOSFET N-CH Si 600V 6A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MTH6N60

Power Field Effect Transistor

文件:232.57 Kbytes Page:6 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied

PHILIPS

飞利浦

MTH6N60产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -65ᄀC

  • Maximum Power Dissipation:

    150000mW

  • Maximum Operating Temperature:

    150ᄀC

  • Maximum Gate Source Voltage:

    ᄆ20V

  • Maximum Drain Source Voltage:

    600V

  • Maximum Continuous Drain Current:

    6A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-7-31 17:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
26+
TO-218
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON/安森美
23+
TO-3P
15238
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
24+
N/A
3400
MOTOROLA/摩托罗拉
22+
TO-3P
6000
十年配单,只做原装
ON/安森美
22+
TO-3P
99448

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