13.1 x 11.7 mm, 3.0 or 5.0 Volt, Clipped Sinewave, TCXO

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 20 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

OUTDOOR LAMP CLUSTER

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20KB SOUND CONTROLLER

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