N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

DESCRIPTION The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. T

Surface Mount Temperature Compensated Voltage Controlled Crystal Oscillators (TCVCXO)

MTCVO11/21 Series Surface Mount Temperature Compensated Voltage Controlled Crystal Oscillators (TCVCXO) Small size, high precision TCVCXO available in standard frequencies for telecommunications and other RF applications requiring clipped sinewave output with low power consumption. Operating volt

SLOTTED OPTICAL SWITCH

文件：307.53 Kbytes Page：4 Pages