TMOS POWER FET 32 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

TMOS POWER FET 32 AMPERES 60 VOLTS

N−Channel Power MOSFET

N?묬hannel Power MOSFET

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N?묬hannel Power MOSFET

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TMOS POWER FET 36 AMPERES 60 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components

N-Channel Enhancement

InPower Product Lines

Fast Switching

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N-Channel 6 0-V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

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