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MTB36N06V

TMOS POWER FET 32 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

MOTOROLA

摩托罗拉

MTB36N06V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

MTB36N06V

TMOS POWER FET 32 AMPERES 60 VOLTS

ETC

知名厂家

MTB36N06V

N−Channel Power MOSFET

ONSEMI

安森美半导体

MTB36N06V

N?묬hannel Power MOSFET

文件:263.99 Kbytes Page:10 Pages

ONSEMI

安森美半导体

N?묬hannel Power MOSFET

文件:263.99 Kbytes Page:10 Pages

ONSEMI

安森美半导体

TMOS POWER FET 36 AMPERES 60 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components

MOTOROLA

摩托罗拉

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.

PHILIPS

飞利浦

MTB36N06V产品属性

  • 类型

    描述

  • 型号

    MTB36N06V

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R

更新时间:2026-5-14 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
23+
NA
1832
专做原装正品,假一罚百!
ON
22+
TO-263
3000
原装正品,支持实单
ON/安森美
22+
TO-263
20000
只做原装
CYSTECH/全宇昕
2511
SOT-223
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
ON
24+
35200
一级代理/放心采购
ON
2025+
TO-263
4835
全新原厂原装产品、公司现货销售
ON
24+
30000
CYSTEKEC
24+
SOT-223
9600
原装现货,优势供应,支持实单!
SST
原厂封装
9800
原装进口公司现货假一赔百
ON
26+
TO-263
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订

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