| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MTB36N06E | TMOSPOWERFET36AMPERES60VOLTS TMOSE-FET™HighEnergyPowerFETD2PAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   |
MTB36N06E | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
FastSwitching 文件：67.44 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：1.52181 Mbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel60V(D-S)MOSFET 文件：995.94 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
24+ |
3350 |
只做原厂渠道 可追溯货源 |
||||
ON |
24+ |
N/A |
1500 |
||||
ON |
23+ |
TO-263 |
6893 |
||||
ON/安森美 |
2022+ |
30000 |
进口原装现货供应,原装 假一罚十 |
||||
ON |
24+ |
35200 |
一级代理/放心采购 |
||||
ON/安森美 |
2022+ |
SOT263 |
12888 |
原厂代理 终端免费提供样品 |
|||
ON |
2025+ |
TO-263 |
4835 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
23+ |
SOT263 |
15020 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
MTB36N06E芯片相关品牌
MTB36N06E规格书下载地址
MTB36N06E参数引脚图相关
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MTB36N06E数据表相关新闻
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DdatasheetPDF页码索引
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