型号 功能描述 生产厂家&企业 LOGO 操作
MTB33N10E

TMOSPOWERFET33AMPERES100VOLTS

TMOSE-FET™HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MTB33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MTB33N10E

N?묬hannelPowerMOSFET

文件:268.35 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N?묬hannelPowerMOSFET

文件:268.35 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=52mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FastSwitching

文件:67.44 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:245.5 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MTB33N10E产品属性

  • 类型

    描述

  • 型号

    MTB33N10E

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK Rail

更新时间:2025-8-3 17:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
MOT
2016+
TO-263
6528
房间原装进口现货假一赔十
MOT
25+23+
TO263
76071
绝对原装正品现货,全新深圳原装进口现货
ON
22+
TO-263
3000
原装正品,支持实单
ON/安森美
24+
4500
只做原厂渠道 可追溯货源
MTB33N10E
164
164
ON
24+
N/A
3000
ON
24+
TO-263
16800
绝对原装进口现货 假一赔十 价格优势!?
ON/安森美
2022+
30000
进口原装现货供应,原装 假一罚十
ON
0106
100
优势货源原装正品

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