TMOS POWER FET 33 AMPERES 100 VOLTS

TMOS E-FET™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N?묬hannel Power MOSFET

文件：268.35 Kbytes Page：10 Pages

N−Channel Power MOSFET

N?묬hannel Power MOSFET

文件：268.35 Kbytes Page：10 Pages

TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fas

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.045 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA