位置:MTB33N10E > MTB33N10E详情

MTB33N10E中文资料

厂家型号

MTB33N10E

文件大小

266.15Kbytes

页面数量

10

功能描述

TMOS POWER FET 33 AMPERES 100 VOLTS

Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK Rail

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MOTOROLA

MTB33N10E数据手册规格书PDF详情

TMOS E-FET™ High Energy Power FET

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS

This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offersa drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor control sand other inductive loads, the avalanche energy capability is specified toeliminate the guess work in designs where inductive loadsare switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Capability Specified at Elevated Temperature

• Low Stored Gate Charge for Efficient Switching

• Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode

• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

MTB33N10E产品属性

  • 类型

    描述

  • 型号

    MTB33N10E

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK Rail

更新时间:2025-10-17 10:59:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
23+
TO263
50000
全新原装正品现货,支持订货
MOTOROLA
24+/25+
784
原装正品现货库存价优
MOTOROLA/摩托罗拉
TO263
275000
一级代理原装正品,价格优势,长期供应!
ON/安森美
24+
4500
只做原厂渠道 可追溯货源
ON/安森美
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
ON
24+
N/A
3000
ON
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
ON
16+
NA
8800
原装现货,货真价优
MOT
24+
TO263
5000
只做原装公司现货
ON
23+
TO-263
8560
受权代理!全新原装现货特价热卖!

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