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MTB33N10E数据手册规格书PDF详情
TMOS E-FET™ High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS
This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offersa drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor control sand other inductive loads, the avalanche energy capability is specified toeliminate the guess work in designs where inductive loadsare switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
MTB33N10E产品属性
- 类型
描述
- 型号
MTB33N10E
- 制造商
ON Semiconductor
- 功能描述
Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK Rail
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
MOTOROLA |
24+/25+ |
784 |
原装正品现货库存价优 |
||||
MOTOROLA/摩托罗拉 |
TO263 |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
ON/安森美 |
24+ |
4500 |
只做原厂渠道 可追溯货源 |
||||
ON/安森美 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
24+ |
N/A |
3000 |
||||
ON |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
ON |
16+ |
NA |
8800 |
原装现货,货真价优 |
|||
MOT |
24+ |
TO263 |
5000 |
只做原装公司现货 |
|||
ON |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
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