型号 功能描述 生产厂家 企业 LOGO 操作
MTB23P06V

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

Motorola

摩托罗拉

MTB23P06V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

MTB23P06V

N-Channel 60 V (D-S) MOSFET

文件:1.32134 Mbytes Page:9 Pages

VBSEMI

微碧半导体

MTB23P06V

P?묬hannel Power MOSFET

文件:263.53 Kbytes Page:10 Pages

ONSEMI

安森美半导体

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

Motorola

摩托罗拉

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components

Motorola

摩托罗拉

P−Channel Power MOSFET

ONSEMI

安森美半导体

P?묬hannel Power MOSFET

文件:263.53 Kbytes Page:10 Pages

ONSEMI

安森美半导体

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

MTB23P06V产品属性

  • 类型

    描述

  • 型号

    MTB23P06V

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET P-CH 60V 23A 3-Pin(2+Tab) D2PAK Rail

更新时间:2025-10-19 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONS
25+23+
D2PAK
24564
绝对原装正品全新进口深圳现货
MOTOROLA
22+
TO-263
3000
原装正品,支持实单
ON
NEW
TO-263
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ON/安森美
2405+
TO-263
4475
只做原装正品渠道订货
ON
23+
TO-263
30
正规渠道,只有原装!
ON/安森美
25+
NA
860000
明嘉莱只做原装正品现货
ON
24+
TO-263
48
ON/安森美
2447
SOT263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON
24+
D2PAK
6000
进口原装正品假一赔十,货期7-10天

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