型号 功能描述 生产厂家 企业 LOGO 操作
MTB23P06V

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

Motorola

摩托罗拉

MTB23P06V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

MTB23P06V

N-Channel 60 V (D-S) MOSFET

文件:1.32134 Mbytes Page:9 Pages

VBSEMI

微碧半导体

MTB23P06V

P?묬hannel Power MOSFET

文件:263.53 Kbytes Page:10 Pages

ONSEMI

安森美半导体

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th

Motorola

摩托罗拉

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components

Motorola

摩托罗拉

P−Channel Power MOSFET

ONSEMI

安森美半导体

P?묬hannel Power MOSFET

文件:263.53 Kbytes Page:10 Pages

ONSEMI

安森美半导体

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

MTB23P06V产品属性

  • 类型

    描述

  • 型号

    MTB23P06V

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET P-CH 60V 23A 3-Pin(2+Tab) D2PAK Rail

更新时间:2025-10-18 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
SOT-263
100000
代理渠道/只做原装/可含税
ON/安森美
24+
NA/
33561
优势代理渠道,原装正品,可全系列订货开增值税票
ON
NEW
TO-263
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
VBsemi
21+
TO263
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
24+
D2PAK
6000
进口原装正品假一赔十,货期7-10天
ONS
25+23+
D2PAK
24564
绝对原装正品全新进口深圳现货
MOTOROLA
22+
TO-263
3000
原装正品,支持实单
ON
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ON
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
ON/安森美
2405+
TO-263
4475
只做原装正品渠道订货

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