型号 功能描述 生产厂家&企业 LOGO 操作
MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET™HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET™HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TMOSPOWERFET23AMPERES60VOLTS

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

P?묬hannelPowerMOSFET

文件:263.53 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel60V(D-S)MOSFET

文件:1.32134 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P?묬hannelPowerMOSFET

文件:263.53 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MTB23P06产品属性

  • 类型

    描述

  • 型号

    MTB23P06

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    TMOS POWER FET 23 AMPERES 60 VOLTS

更新时间:2025-5-19 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
SOT-263
100000
代理渠道/只做原装/可含税
ON
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
VBsemi
21+
TO263
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ON/安森美
2223+
TO-263
26800
只做原装正品假一赔十为客户做到零风险
ON
23+
TO-263
6893
MOTOROLA/摩托罗拉
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
MOT/ON
23+
TO
15008
原厂授权一级代理,专业海外优势订货,价格优势、品种
ONS
25+23+
D2PAK
24564
绝对原装正品全新进口深圳现货
MTB23P06ET4
3
3

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