N-Channel Enhancement Mode Power MOSFET

文件：382.33 Kbytes Page：8 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.48658 Mbytes Page：5 Pages

MOSFET

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

Fast Switching

文件：67.37 Kbytes Page：2 Pages

N-Channel 60-V (D-S) MOSFET

文件：897.38 Kbytes Page：6 Pages

20A mps,60 Volts N-CHANNEL MOSFET

文件：193.72 Kbytes Page：2 Pages