isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

High Energy Power FET

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TMOS POWER FET 10 AMPERES

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High Energy Power FET

TMOS POWER FET 10 AMPERES

N-Channel 650 V (D-S) MOSFET

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10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

N-Channel 650 V (D-S) MOSFET

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POWER MOSFET

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10A 400V N-channel Enhancement Mode Power MOSFET

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10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.59586 Mbytes Page：12 Pages