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型号	功能描述	生产厂家企业	LOGO
MT5C2568	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568	All inputs and outputs are TTL compatible 文件：217.48 Kbytes Page：17 Pages	MICROSS	MICROSS
MT5C2568	Low power standby 文件：217.48 Kbytes Page：17 Pages	MICROSS	MICROSS
MT5C2568C-20/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-20SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-25/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-25SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-35/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-35SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-45/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-45SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-55/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-55SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-70/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568C-70SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-100/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-100SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-20/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-20SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-25/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-25SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-35/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-35SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-45/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-45SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-55/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-55SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-70/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568CW-70SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-20/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-20SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-25/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-25SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-35/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-35SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-45/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-45SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-55/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-55SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-70/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568EC-70SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-100/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-100SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-20/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-20SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-25/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-25SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-35/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-35SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-45/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-45SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-55/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-55SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-70/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568ECW-70SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568F-100/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568F-100SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568F-20/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568F-20SLASH883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN
MT5C2568F-25/883C	32K x 8 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns	AUSTIN	AUSTIN

MT5C2568产品属性

类型
描述
型号
MT5C2568
制造商
Mitel Networks Corporation
制造商
Motorola Inc

MT5C2568供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	MT5C2568F-45L	ASI	24+	NA/	30	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市明嘉莱科技有限公司	MT5C2568-12	MICRON/美光	24+	NA	990000	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	MT5C2568C-15/883C(QP7C199-15DM	ASI	23+	DIP	6800	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市创新迹电子有限公司	MT5C2568ECW-20	ASI	22+	CLCC	20000	公司只做原装品质保障	询价
深圳市赛美科科技有限公司	MT5C2568-12	Micron		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市诺美思科技有限公司	MT5C2568DJ-15	MICRON		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市赛特兴科技有限公司	MT5C2568EC-15L	ASI	QQ咨询	CLCC	827	全新原装研究所指定供货商	询价
标准国际(香港)有限公司	MT5C2568DJ-25	MT	25+		63	公司优势库存热卖中!!	询价
深圳市中飞凌科技有限公司	MT5C2568DJ-15	MICRON	26+	SOJ28	360000	原装现货	询价
深圳市美思瑞电子科技有限公司	MT5C2568C-20/883C	ASI	22+	AUCDIP	12245	现货,原厂原装假一罚十!	询价

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