型号 功能描述 生产厂家 企业 LOGO 操作
MT5C2564

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

MT5C2564

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

MT5C2564

64K x 4 SRAM SRAM MEMORY ARRAY

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

SRAM

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. FEATURES • High Speed: 15, 20, 25, 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-pe

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

64K x 4 SRAM SRAM MEMORY ARRAY

文件:94.7 Kbytes Page:12 Pages

AUSTIN

MT5C2564产品属性

  • 类型

    描述

  • 型号

    MT5C2564

  • 制造商

    Micross Components, Inc.

  • 功能描述

    SRAM, 256KB - Rail/Tube

更新时间:2025-12-26 11:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ASI
22+
CLCC
12245
现货,原厂原装假一罚十!
N/A
24+
NA/
3264
原装现货,当天可交货,原型号开票
MITEL
23+
SOP24
12430
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
MICROSS
15+
24DIP.300
50
受控型号优势订货-军工器件供应商
原装
2308+
NA
5620
十年专业专注 优势渠道商正品保证公司现货
ASD
22+
CDIP
20000
公司只做原装 品质保障
N/A
23+
NA
50000
全新原装正品现货,支持订货
mitel
24+
N/A
6980
原装现货,可开13%税票
ASI
2021+
60000
原装现货,欢迎询价
ASD
QQ咨询
CDIP
110
全新原装 研究所指定供货商

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