MT5C1005规格书应用电路现货行情报价AUSTIN-IC资料网

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型号	功能描述	生产厂家企业	LOGO
MT5C1005	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005	256K x 4 SRAM SRAM MEMORY ARRAY 文件：103.01 Kbytes Page：13 Pages	AUSTIN	AUSTIN
MT5C1005C-20L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-20L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-20L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-20LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-20LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-20LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-25L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-25L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-25L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-25LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-25LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-25LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-35L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-35L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-35L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-35LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-35LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-35LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-40L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-40L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-40L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-40LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-40LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-40LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-55L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-55L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-55L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-55LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-55LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-55LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-70L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-70L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-70L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-70LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-70LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005C-70LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-20L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-20L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-20L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-20LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-20LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-20LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-25L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-25L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-25L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-25LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-25LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-25LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-35L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-35L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-35L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-35LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-35LSLASHIT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-35LSLASHXT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-40L/883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-40L/IT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-40L/XT	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN
MT5C1005DCJ-40LSLASH883C	256K x 4 SRAM SRAM MEMORY ARRAY GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,	AUSTIN	AUSTIN

MT5C1005产品属性

类型
描述
型号
MT5C1005
制造商
AUSTIN
制造商全称
Austin Semiconductor
功能描述
256K x 4 SRAM SRAM MEMORY ARRAY

MT5C1005供应商更多...

更新时间：2025-12-25 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	MT5C1005C-25IC	ASI	25+	DIP28	58788	百分百原装现货实单必成欢迎询价	询价
深圳市创新迹电子有限公司	MT5C1005-2	MT	22+	BULK DIP	20000	公司只做原装品质保障	询价
深圳市赛美科科技有限公司	MT5C1008-17	MICRON		DIP32	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市赛特兴科技有限公司	MT5C1005C-25/883C	ASI	QQ咨询	AUCDIP	835	全新原装研究所指定供货商	询价
深圳市卓越微芯电子有限公司	MT5C1005	MT	25+	DIP	4758	百分百原装正品真实公司现货库存本公司只做原装可	询价
标准国际(香港)有限公司	MT5C1005DJ-35	MT	25+		8	公司优势库存热卖中!!	询价
深圳市美思瑞电子科技有限公司	MT5C1005C-25/883	ASI	22+	AUCDIP	12245	现货,原厂原装假一罚十!	询价
贸泽芯城（深圳）电子科技有限公司	MT5C1005DJ35	MICRON/美光	23+	SOJ	14930	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市一线半导体有限公司	MT5C1005-20		24+	DIP28	1	自己现货	询价
深圳市创盛芯科技有限公司	MT5C1005-20	MT/民芯	25+	DIP28	7	全新原装正品支持含税	询价

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2020-11-21

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MT5C1005产品属性

MT5C1005供应商更多...

MT5C1005芯片相关品牌

MT5C1005规格书下载地址

MT5C1005参数引脚图相关

MT5C1005数据表相关新闻

MT61K512M32KPA-21:U

MT61K512M32KPA-24:U

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