型号 功能描述 生产厂家 企业 LOGO 操作
MT54W4MH9B

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

MT54W4MH9B产品属性

  • 类型

    描述

  • 型号

    MT54W4MH9B

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    36Mb QDR⑩II SRAM 2-WORD BURST

更新时间:2026-1-5 10:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MTK
23+
QFP
8560
受权代理!全新原装现货特价热卖!
CYPRESS
23+
BGA
7000
绝对全新原装!100%保质量特价!请放心订购!
只做原装
24+
QFP
36520
一级代理/放心采购
MEDIATEK
16+
TQFP
392
进口原装现货/价格优势!
MEDIATEK
22+
QFP
20000
公司只做原装 品质保障
MEDIATEK
24+
QFP
5000
全现原装公司现货
MICRON/美光
24+
BGA
22055
郑重承诺只做原装进口现货
MSTAR/晨星半导体
25+
QFP
65248
百分百原装现货 实单必成
MEDIATEK
15/17+
BGAQFP
850
普通
CYPRESS
22+
BGA
3000
原装正品,支持实单

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