型号 功能描述 生产厂家 企业 LOGO 操作
MT54W4MH9B

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

36Mb QDR?줚I SRAM 2-WORD BURST

4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM GENERAL DESCRIPTION The Micron® QDR™II (Quad Data Rate™) synchronous, pipelined burst SRAM employs high-speed, low power CMOS designs using an advanced 6T CMOS process. The QDR architecture consists of two separat

Micron

美光

MT54W4MH9B产品属性

  • 类型

    描述

  • 型号

    MT54W4MH9B

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    36Mb QDR⑩II SRAM 2-WORD BURST

更新时间:2026-1-5 19:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MEDIATE
20+
BGA
19570
原装优势主营型号-可开原型号增税票
MEDIATEK
25+
TQFP
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MSTAR/晨星半导体
25+
QFP
65248
百分百原装现货 实单必成
MEDIATEK
QFP
580
一级代理 原装正品假一罚十价格优势长期供货
MICRON
23+
NA
108
专做原装正品,假一罚百!
CYPRESS
22+
BGA
3000
原装正品,支持实单
只做原装
24+
QFP
36520
一级代理/放心采购
CYPRESS
23+
BGA
7000
绝对全新原装!100%保质量特价!请放心订购!
MEDIATEK
12+
QFP
1414
原装现货海量库存欢迎咨询
MEDIATEK
15/17+
BGAQFP
850
普通

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