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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMsarehigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsorganizedinax8configuration.The8Megx8DRAMsarefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3.3V±0.3Vpowersup | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
DRAM GENERALDESCRIPTION The8Megx8DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicescontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.TheMT4LC8M8C2andMT4LC8M8P4arefunctionallyorganizedas8,388,608locationscontainingeightbitseach. FEATURES •Single+3. | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
MT4LC8M8产品属性
- 类型
描述
- 型号
MT4LC8M8
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
22+ |
TSOP-32 |
4650 |
||||
MICRON/镁光 |
2021+ |
NA |
1630 |
十年专营原装现货,假一赔十 |
|||
MICRON/美光 |
22+/23+ |
TSOP |
9800 |
原装进口公司现货假一赔百 |
|||
Micron |
原包装 |
6120 |
原装正品!假一罚十!现货库存热卖 |
||||
MICRON/美光 |
14142 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
MT |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
|||
MT |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
MICRON |
19+ |
SOJ |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
MT |
20+ |
TSOP |
11520 |
特价全新原装公司现货 |
|||
MICRON/镁光 |
23+ |
NA |
1630 |
原装正品代理渠道价格优势 |
MT4LC8M8芯片相关品牌
MT4LC8M8规格书下载地址
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本公司销售原装正品价格优惠欢迎订购
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只做原装正品，原包装标签欢迎咨询！
2021-5-29MT52L512M32D2PU-107 WT
MT52L512M32D2PU-107WTMICRON/美光2020+BGA100000 MT52L768M32D3PU-107WTMICRON/美光2020+BGA100000 MT52L256M64D2LZ-107WTMICRON/美光2020+BGA100000 MT52L512M32D2PF-107WTMICRON/美光2020+BGA100000 MT52L512M64D4GN-107WTMICRON/美光2020+BGA100000 MT52L256M64D2PP-107WTMICRON/美光
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MT48LC8M16A2P-75IT:GMICRON原装现货长期供应QQ：2880524281
2021-4-22MT48LC8M16A2TG-75:G 深圳旭亨半导体有限公司
MT48LC8M16A2TG-75:GMICRON原装现货长期供应QQ：2880524281
2021-4-22
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