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位置：首页 > IC中文资料第5474页 > MT4LC8M8

型号 功能描述 生产厂家 企业 LOGO 操作
MT4LC8M8B6DJ-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8B6DJ-5S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8B6DJ-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8B6DJ-6S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8B6TG-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8B6TG-5S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8B6TG-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8B6TG-6S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8C2DJ-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8C2DJ-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8C2TG-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8C2TG-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8E1

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1DJ-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1DJ-5S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1DJ-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1DJ-6S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1TG-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1TG-5S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1TG-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8E1TG-6S

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.3V ±0.3V power sup

Micron

美光

MT4LC8M8P4

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8P4DJ-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8P4DJ-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8P4TG-5

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8P4TG-6

DRAM

GENERAL DESCRIPTION The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC8M8C2 and MT4LC8M8P4 are functionally organized as 8,388,608 locations containing eight bits each. FEATURES • Single +3.

Micron

美光

MT4LC8M8B6DJ-5

DRAM

Micron

美光

MT4LC8M8B6DJ-5S

DRAM

Micron

美光

MT4LC8M8C2DJ-5

DRAM

Micron

美光

MT4LC8M8产品属性

  • 类型

    描述

  • 型号

    MT4LC8M8

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    DRAM

MT4LC8M8供应商更多...

更新时间：2025-12-25 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
MT4LC8M8C2-5F
MICRON
23+
NA
20000
全新原装假一赔十
询价
深圳市华睿芯科技有限公司
MT4LC8M8C2-5F
MT
24+
TSOP
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
千层芯半导体(深圳)有限公司
MT4LC8M8C2P-5
MICRON
24+
TSSOP
19500
一级授权代理品牌进口原装现货假一赔十
询价
深圳市创新迹电子有限公司
MT4LC8M8C2TG-2
22+
TSOP32
20000
公司只做原装 品质保障
询价
深圳市毅创腾电子科技有限公司
MT4LC8M8C2TG5
MT
23+
TSOP/32
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
深圳市美思瑞电子科技有限公司
MT4LC8M8C2TG-5
MICRON/镁光
22+
TSOP-32
12245
现货,原厂原装假一罚十!
询价
深圳市正纳电子有限公司
MT4LC8M8C2TG5
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
谛辉(北京/上海/青岛 )电子科技有限公司
MT4LC8M8C2-5F
MITEL
25+
SOP16
18000
原厂直接发货进口原装
询价
贸泽芯城（深圳）电子科技有限公司
MT4LC8M8C2-5
MICRON/美光
23+
14142
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市宏世佳电子科技有限公司
MT4LC8M8B6TG-6
MICRON
2025+
TSOP
3587
全新原厂原装产品、公司现货销售
询价

MT4LC8M8芯片相关品牌

MT4LC8M8规格书下载地址

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