SYNCHRONOUS DRAM

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SYNCHRONOUS DRAM

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SYNCHRONOUS DRAM

128Mb: x16, x32 MOBILE SDRAM FEATURES • Temperature Compensated Self Refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/prech

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

SDRAM

封装/外壳：90-VFBGA 包装：托盘 描述：IC DRAM 128MBIT PARALLEL 90VFBGA 集成电路（IC） 存储器

SDRAM 128M X32 VFBGA

SDRAM 128M X32 VFBGA

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

SDR SDRAM

文件：3.55494 Mbytes Page：79 Pages

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.56713 Mbytes Page：79 Pages