SYNCHRONOUS DRAM

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

SYNCHRONOUS DRAM

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages

MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.56713 Mbytes Page：79 Pages

SDRAM

封装/外壳：86-TFSOP（0.400"，10.16mm 宽） 包装：散装 描述：IC DRAM 128MBIT PAR 86TSOP II 集成电路（IC） 存储器

SDRAM 128M X32 TSOP

封装/外壳：86-TFSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC DRAM 128MBIT PAR 86TSOP II 集成电路（IC） 存储器

SDR SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

Features • PC100-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full

128Mb: x32 SDRAM MT48LC4M32B2 ??1 Meg x 32 x 4 Banks

文件：3.55494 Mbytes Page：79 Pages