型号 功能描述 生产厂家 企业 LOGO 操作

DOUBLE DATA RATE DDR SDRAM

GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad bank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture

Micron

美光

DOUBLE DATA RATE DDR SDRAM

GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

Micron

美光

DOUBLE DATA RATE DDR SDRAM

GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

Micron

美光

DOUBLE DATA RATE DDR SDRAM

GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

Micron

美光

DOUBLE DATA RATE DDR SDRAM

GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

Micron

美光

DOUBLE DATA RATE DDR SDRAM

GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

Micron

美光

DOUBLE DATA RATE DDR SDRAM

GENERAL DESCRIPTION The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quadbank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is e

Micron

美光

IC DRAM 128M PARALLEL 66TSOP

Micron

美光

IC DRAM 128M PARALLEL 66TSOP

Micron

美光

封装/外壳:66-TSSOP(szerokość 0,400",10,16mm) 包装:卷带(TR)剪切带(CT) 描述:IC DRAM 128MBIT PARALLEL 66TSOP 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:66-TSSOP(szerokość 0,400",10,16mm) 包装:卷带(TR)剪切带(CT) 描述:IC DRAM 128MBIT PARALLEL 66TSOP 集成电路(IC) 存储器

ETC

知名厂家

IC DRAM 128M PARALLEL 66TSOP

Micron

美光

MT46V8M16TG产品属性

  • 类型

    描述

  • 型号

    MT46V8M16TG

  • 制造商

    Micron Technology Inc

  • 功能描述

    8MX16 SDRAM DDR PLASTIC TSOP 2.5V D=REV T25A - Tape and Reel

更新时间:2025-11-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
标准封装
13048
全新原装正品/价格优惠/质量保障
MT
24+
NA/
3291
原装现货,当天可交货,原型号开票
MICRON
18+
TSOP
9241
全新原装现货,可出样品,可开增值税发票
MT
21+
TSOP
620
全新原装鄙视假货
MICRON
20+
TSOP
2960
诚信交易大量库存现货
MICRON/美光
0718+
明嘉莱只做原装正品现货
2510000
TSOP66
MICRON
23+
TSOP
7566
原厂原装
MICRON/美光
TSOP66
23+
6000
专业配单原装正品假一罚十
MICRON
25+23+
TSSOP-66
52326
绝对原装正品现货,全新深圳原装进口现货
MT
22+
TSOP
3000
原装正品,支持实单

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