Mobile Double Data Rate (DDR) SDRAM

General Description The 256Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. On the x16 device, each of the 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. On the x32 de

Mobile Double Data Rate (DDR) SDRAM

General Description The 256Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. On the x16 device, each of the 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. On the x32 de

封装/外壳：60-VFBGA 包装：卷带（TR） 描述：IC DRAM 256MBIT PARALLEL 60VFBGA 集成电路（IC） 存储器

封装/外壳：60-VFBGA 包装：卷带（TR） 描述：IC DRAM 256MBIT PARALLEL 60VFBGA 集成电路（IC） 存储器

Mobile DDR SDRAM MT46H16M16LF ??4 Meg x 16 x 4 banks MT46H8M32LF/LG ??2 Meg x 32 x 4 banks

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