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型号 功能描述 生产厂家 企业 LOGO 操作
MT28F640J3

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

MICRON

美光

封装/外壳:64-FBGA 包装:卷带(TR) 描述:IC FLASH 64MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 64M PARALLEL 64FBGA

MICRON

美光

IC FLASH 64M PARALLEL 64FBGA

MICRON

美光

封装/外壳:64-FBGA 包装:卷带(TR) 描述:IC FLASH 64MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 64M PARALLEL 64FBGA

MICRON

美光

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

MT28F640J3产品属性

  • 类型

    描述

  • 存储器格式:

    闪存

  • 技术:

    闪存

  • 存储容量:

    64Mb (8M x 8,4M x 16)

  • 访问时间:

    115ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    64-FBGA

  • 供应商器件封装:

    64-FBGA(10x13)

更新时间:2026-7-23 17:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHIL
22+
SOP-8
5000
只做原装鄙视假货15118075546
SMD
2450+
SMD
9850
只做原装正品现货或订货假一赔十!
MICRON/美光
25+
BGA
8000
全新原装现货特价销售,欢迎来电查询
Micron(镁光)
25+
N/A
22412
原装正品现货,原厂订货,可支持含税原型号开票。
N/A
22+
QFN
20000
公司只做原装 品质保障
MICRON/美光
25+
TSOP
13800
原装,请咨询
TE/泰科
2608+
/
233927
一级代理,原装现货
M3TEK/莱颉
25+
SMD
20000
本公司 只做全新原装正品
MICRON/美光
25+
N/A
12496
MICRON/美光原装正品MT28F640J3RP-115即刻询购立享优惠#长期有货
MICRON
25+
TSOP56
1470
原装现货

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