型号 功能描述 生产厂家 企业 LOGO 操作
MT28F640J3

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

封装/外壳:64-FBGA 包装:卷带(TR) 描述:IC FLASH 64MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 64M PARALLEL 64FBGA

Micron

美光

IC FLASH 64M PARALLEL 64FBGA

Micron

美光

封装/外壳:64-FBGA 包装:卷带(TR) 描述:IC FLASH 64MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 64M PARALLEL 64FBGA

Micron

美光

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

MT28F640J3产品属性

  • 类型

    描述

  • 型号

    MT28F640J3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    Q-FLASHTM MEMORY

更新时间:2025-12-24 12:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MT
20+
TSOP
2860
原厂原装正品价格优惠公司现货欢迎查询
MICRON/美光
25+
N/A
12496
MICRON/美光原装正品MT28F640J3RP-115即刻询购立享优惠#长期有货
MICRON
25+
BGA
2789
原装优势!绝对公司现货!
MICRON/美光
22+
TSOP
12245
现货,原厂原装假一罚十!
MICRON/美光
25+
TSOP
13800
原装,请咨询
MICREL/麦瑞
2025+
TSOP56
5000
原装进口价格优 请找坤融电子!
MTCROM
23+
TSOP54
12030
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
MICRON/美光
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MICRON/镁光
23+
BGA
50000
全新原装正品现货,支持订货
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持

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