型号 功能描述 生产厂家 企业 LOGO 操作
MT28F640J3

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

Micron

美光

封装/外壳:64-FBGA 包装:卷带(TR) 描述:IC FLASH 64MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 64M PARALLEL 64FBGA

Micron

美光

IC FLASH 64M PARALLEL 64FBGA

Micron

美光

封装/外壳:64-FBGA 包装:卷带(TR) 描述:IC FLASH 64MBIT PARALLEL 64FBGA 集成电路(IC) 存储器

ETC

知名厂家

IC FLASH 64M PARALLEL 64FBGA

Micron

美光

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

MT28F640J3产品属性

  • 类型

    描述

  • 型号

    MT28F640J3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    Q-FLASHTM MEMORY

更新时间:2025-10-18 10:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICRON/镁光
24+
BGA
9600
原装现货,优势供应,支持实单!
MICRON
2023+
TSOP
53500
正品,原装现货
MT
22+
TSSOP
3000
原装正品,支持实单
MICRON/美光
23+
TSOP
98900
原厂原装正品现货!!
MICRON/美光
24+
BGA
8000
全新原装现货特价销售,欢迎来电查询
MICRON
2005
BGA
124
现货库存/价格优惠热卖
MICRON
1824+
TSOP-56
3200
原装现货专业代理,可以代拷程序
MICRON
24+
TSOP-56
36500
原装现货/放心购买
MICRON
25+
TSOP56
10383
MICRON
20+
1562
全新现货热卖中欢迎查询

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