位置:MT28F640J3FS-11 > MT28F640J3FS-11详情

MT28F640J3FS-11中文资料

厂家型号

MT28F640J3FS-11

文件大小

548.36Kbytes

页面数量

52

功能描述

Q-FLASHTM MEMORY

NAND Flash Parallel 3.3V 64Mbit 8M/4M x 8bit/16bit 115ns 64-Pin FBGA Tray

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

Micron Technology

简称

Micron镁光

中文名称

美国镁光科技有限公司官网

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MT28F640J3FS-11数据手册规格书PDF详情

GENERAL DESCRIPTION

The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks.

Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks.

These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.

FEATURES

• x8/x16 organization

• One hundred twenty-eight 128KB erase blocks (128Mb)

Sixty-four 128KB erase blocks (64Mb)

Thirty-two 128KB erase blocks (32Mb)

• VCC, VCCQ, and VPEN voltages:

2.7V to 3.6V VCC operation

2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation

2.7V to 3.6V, or 5V VPEN application programming

• Interface Asynchronous Page Mode Reads:

150ns/25ns read access time (128Mb)

120ns/25ns read access time (64Mb)

110ns/25ns read access time (32Mb)

• Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition

• Security OTP block feature Permanent block locking (Contact factory for availability)

• Industry-standard pinout

• Inputs and outputs are fully TTL-compatible

• Common Flash Interface (CFI) and Scalable Command Set

• Automatic write and erase algorithm

• 4.7µs-per-byte effective programming time using write buffer

• 128-bit protection register

64-bit unique device identifier

64-bit user-programmable OTP cells

• 100,000 ERASE cycles per block

• Automatic suspend options:

Block Erase Suspend-to-Read

Block Erase Suspend-to-Program

Program Suspend-to-Read

MT28F640J3FS-11产品属性

  • 类型

    描述

  • 型号

    MT28F640J3FS-11

  • 制造商

    Micron Technology Inc

  • 功能描述

    NAND Flash Parallel 3.3V 64Mbit 8M/4M x 8bit/16bit 115ns 64-Pin FBGA Tray

  • 制造商

    Micron Technology Inc

  • 功能描述

    IC FLASH 64MBIT 115NS 64FBGA

更新时间:2025-5-13 16:04:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON
19+
BGA
14557
MICRON
24+
TSOP-56
4650
MICRON
2020+
BGA
3192
百分百原装正品 真实公司现货库存 本公司只做原装 可
MICRON
23+
BGA
5000
原装正品,假一罚十
MICRON
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
MICRON
950
全新原装 货期两周
MICRON
25+23+
BGA
42843
绝对原装正品全新进口深圳现货
MICRON
19+
TSOP
32000
原装正品,现货特价
MICRON
24+
BGA
36500
一级代理/放心采购
MICRON
20+
BGA
2800
绝对全新原装现货,欢迎来电查询

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Micron Technology 美国镁光科技有限公司

中文资料: 6785条

Micron Technology 是一家全球领先的半导体公司,专注于存储和内存解决方案的开发与制造。成立于1978年,总部位于美国爱达荷州博伊西,Micron 的产品包括动态随机存取存储器(DRAM)、闪存(NAND)、以及其他类型的内存和存储组件,广泛应用于个人计算机、移动设备、服务器、数据中心和工业设备等多个领域。公司致力于通过创新与研发推动技术进步,提供高性能、高可靠性的产品,以满足全球客户不断变化的需求。Micron 还积极参与可持续发展和社会责任,致力于在创新与环境保护之间取得平衡。