型号 功能描述 生产厂家 企业 LOGO 操作

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

GENERAL DESCRIPTION The MT28F016S5 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 2,097,152 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology adv

Micron

美光

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

GENERAL DESCRIPTION The MT28F016S5 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 2,097,152 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology adv

Micron

美光

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

Micron

美光

28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY

INTRODUCTION The documentation of the Intel 28F016SA memory device includes this datasheet, a detailed user’s manual, and a number of application notes, all of which are referenced at the end of this datasheet. Includes Commercial and Extended Temperature Specifications ■ User-Selectable 3.3V o

Intel

英特尔

16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY

Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power operation, user-selectable VPP voltage and high read/program perf

Intel

英特尔

16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

INTRODUCTION The documentation of the Intel 28F016XD flash memory device includes this datasheet, a detailed user’s manual, and a number of application notes and design tools, all of which are referenced in Appendix B. The datasheet is intended to give an overview of the chip feature-set and of

Intel

英特尔

16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memo

Intel

英特尔

16M (1M 횞 16, 2M 횞 8) Flash Memory

INTRODUCTION Sharp’s LH28F016LL 16M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3 V single voltage operation and very high read/write performance, the LH28F016

SHARPSharp Corporation

夏普

MT28F016产品属性

  • 类型

    描述

  • 型号

    MT28F016

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MT
24+
NA/
811
优势代理渠道,原装正品,可全系列订货开增值税票
MICRON
2016+
TSOP40
9000
只做原装,假一罚十,公司可开17%增值税发票!
MT
23+
TSOP40
20000
全新原装假一赔十
MT
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
MCT
24+/25+
4868
原装正品现货库存价优
MICRON/美光
TSOP40
125000
一级代理原装正品,价格优势,长期供应!
micron(镁光)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MT
24+
TSOP
35200
一级代理/放心采购
MT
25+
119
公司优势库存 热卖中!!
MICRON
原厂封装
9800
原装进口公司现货假一赔百

MT28F016数据表相关新闻