INTRODUCTION

Sharp’s LH28F016LL 16M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3 V single voltage operation and very high read/write performance, the LH28F0166LL is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

• User-Configurable x8 or x16 Operation

• 3 V Write/Erase Operation (3 V VPP)

– 2.7 - 3.6 V Write-Erase Operation

• 120 ns Maximum Access Time (VCC = 3.0 V)

• 150 ns Maximum Access Time (VCC = 2.7 V)

• 32 Independently Lockable Blocks (64K)

• 0.48 MB/sec Write Transfer Rate

• 100,000 Erase Cycles per Block

• Revolutionary Architecture

– Pipelined Command Execution

– Write During Erase

– Command Superset of Sharp LH28F016SU

• 10 µA (MAX.) ICC in CMOS Standby

• 5 µA (MAX.) Deep Power-Down

• State-of-the Art 0.6 µm ETOX™ Flash Technology

• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package