位置：首页 > IC中文资料第5890页 > MT28F004B3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MT28F004B3 | FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 |   | |
MT28F004B3 | FLASH MEMORY | Micron 美光 | | |
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
MT28F004B3产品属性
- 类型
描述
- 型号
MT28F004B3
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron |
22+ |
40TSOP I |
9000 |
原厂渠道,现货配单 |
|||
TI/德州仪器 |
23+ |
SOP8 |
12000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
Micron |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
9914+ |
TSOP |
7 |
原装 |
||||
MT |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
|||
Lyontek |
23+24 |
BGA |
27960 |
原装现货.优势热卖.终端BOM表可配单 |
|||
Micron Technology Inc. |
24+ |
40-TSOP I |
56200 |
一级代理/放心采购 |
|||
MT/兴晶泰 |
25+ |
原厂原封可拆样 |
65248 |
百分百原装现货 实单必成 |
|||
MT |
2223+ |
TSOP |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
MT |
17+ |
TSOP40 |
9988 |
只做原装进口,自己库存 |
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MT28F004B3规格书下载地址
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DdatasheetPDF页码索引
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