位置：首页 > IC中文资料第5890页 > MT28F004B3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MT28F004B3 | FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | MICRON 美光 |   | |
MT28F004B3 | FLASH MEMORY | MICRON 美光 | | |
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | MICRON 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | MICRON 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | MICRON 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | MICRON 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | MICRON 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | MICRON 美光 | | ||
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
MT28F004B3产品属性
- 类型
描述
- 型号
MT28F004B3
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MT |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
|||
micron(镁光) |
25+ |
EASYBGA-64(10x13) |
6843 |
样件支持,可原厂排单订货! |
|||
micron(镁光) |
25+ |
EASYBGA-64(10x13) |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MT/兴晶泰 |
2026+ |
原厂原封可拆样 |
65248 |
百分百原装现货 实单必成 |
|||
Micron Technology Inc. |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
MICRON |
16+ |
FAI |
4000 |
进口原装现货/价格优势! |
|||
MT |
2223+ |
TSOP |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
MT |
2021+ |
TSOP |
6800 |
原厂原装,欢迎咨询 |
|||
TI/德州仪器 |
23+ |
SOP8 |
12000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
Micron |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
MT28F004B3芯片相关品牌
MT28F004B3规格书下载地址
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