位置：首页 > IC中文资料第5890页 > MT28F004B3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MT28F004B3 | FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 |   | |
MT28F004B3 | FLASH MEMORY | Micron 美光 | | |
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
FLASH MEMORY GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5 | Micron 美光 | | ||
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：40-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
MT28F004B3产品属性
- 类型
描述
- 型号
MT28F004B3
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MT/兴晶泰 |
25+ |
原厂原封可拆样 |
65248 |
百分百原装现货 实单必成 |
|||
MT |
TSOP40 |
0348+ |
300 |
全新原装进口自己库存优势 |
|||
MT |
17+ |
TSOP40 |
9988 |
只做原装进口,自己库存 |
|||
MT |
2223+ |
TSOP |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
MT |
20+ |
TSOP |
2960 |
诚信交易大量库存现货 |
|||
MICRON/美光 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
MICRON |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
Micron |
22+ |
40TSOP I |
9000 |
原厂渠道,现货配单 |
|||
9914+ |
TSOP |
7 |
原装 |
||||
TI/德州仪器 |
23+ |
SOP8 |
12000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
MT28F004B3规格书下载地址
MT28F004B3参数引脚图相关
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- MT28F004B5VG-8 BET
- MT28F004B5VG-8 B TR
- MT28F004B5VG-8 B
- MT28F004B58TE
- MT28F004B5-1
- MT28F004B5
- MT28F004B3WG-8T
- MT28F004B3WG-8B
- MT28F004B3VG-8T
- MT28F004B3VG-8B
- MT28F004B3VG-8 TET TR
- MT28F004B3VG-8 TET
- MT28F004B3VG-8 T TR
- MT28F004B3VG-8 T
- MT28F004B3VG-8 BET TR
- MT28F004B3VG-8 BET
- MT28F004B3VG-8 B TR
- MT28F004B3VG-8 B
- MT28F004B3SG-8T
- MT28F004B3SG-8B
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