型号 功能描述 生产厂家&企业 LOGO 操作
MT28F004B3

FLASHMEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

FLASHMEMORY

GENERALDESCRIPTION TheMT28F004B3(x8)andMT28F400B3(x16/x8)arenonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining4,194,304bitsorganizedas262,144words(16bits)or524,288bytes(8bits).Writingorerasingthedeviceisdonewitheithera3.3Vor5

MicronMicron Technology

镁光美国镁光科技有限公司

Micron

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

封装/外壳:40-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 4MBIT PARALLEL 40TSOP I 集成电路(IC) 存储器

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

MT28F004B3产品属性

  • 类型

    描述

  • 型号

    MT28F004B3

  • 制造商

    MICRON

  • 制造商全称

    Micron Technology

  • 功能描述

    FLASH MEMORY

更新时间:2025-7-27 15:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micron Technology Inc
23+/24+
40-TFSOP
8600
只供原装进口公司现货+可订货
MICRON
16+
FAI
4000
进口原装现货/价格优势!
MT
20+
TSOP
2960
诚信交易大量库存现货
MT
2223+
TSOP
26800
只做原装正品假一赔十为客户做到零风险
MT
2021+
TSOP
6800
原厂原装,欢迎咨询
TI/德州仪器
23+
SOP8
12000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
Micron
22+
40TSOP I
9000
原厂渠道,现货配单
Lyontek
23+24
BGA
27960
原装现货.优势热卖.终端BOM表可配单
Micron Technology Inc.
24+
40-TSOP I
56200
一级代理/放心采购
MT/兴晶泰
25+
原厂原封可拆样
65248
百分百原装现货 实单必成

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