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FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

Micron

镁光

FLASH MEMORY

GENERAL DESCRIPTION The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5

Micron

镁光

更新时间:2025-8-7 11:28:03
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22+
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现货,原厂原装假一罚十!
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16+
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4000
进口原装现货/价格优势!
Micron
23+
40-TSOP
36500
原装正品现货库存QQ:2987726803
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22+
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2025+
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3715
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24+
5000
公司存货
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22+
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3000
原装正品,支持实单

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