| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MT-512C | GPS 模组 MT-512C GPS module features high sensitivity, low power and ultra small form factor. This GPS module is powered by MTK GPS solution; it can provide you with superior sensitivity and performance even in urban canyon and dense foliage environment. MT-512C supports up to 210 PRN channels. With 66 searc • MediaTek high performance GPS Chipset\n• Extremely fast TTFF (Time To First Fix) at low signal level\n• Built-in LNA \n•Compact size (12.6mm x 12.0 mm x 7.6mm) suitable for space-sensitive application\n• Support NMEA0183 V4.0(GGA,GSA,GSV,RMC)\n• Support SBAS (WASS, EGNOS, MSAS, GAGAN), QZSS; | GlobalSat | ||
N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat | PHILIPS 飞利浦 | |||
IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN | STMICROELECTRONICS 意法半导体 | |||
Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S. SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo | STMICROELECTRONICS 意法半导体 |
MT-512C规格书下载地址
MT-512C参数引脚图相关
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MT-512C数据表相关新闻
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