Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75␣ Ω systems by combining low noise figure with high

Hermetic Metal/Beryllia Microstrip Package

Description The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high I

封装/外壳：4-SMD（200 密耳 BeO） 包装：散装 描述：IC AMP ISM 50MHZ-1.6GHZ 200 MIL RF/IF，射频/中频和 RFID 射频放大器

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Optocoupler with Phototransistor Output

Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

P-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor controls □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

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N-Channel Enhancement-Mode Vertical DMOS Power FETs???

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