Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block above 0.5 GHz and can be used as a high gain transistor below this freque

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this freq

封装/外壳：4-SMD（70 密耳） 包装：散装 描述：IC AMP ISM 0HZ-4GHZ 70 MIL PKG RF/IF，射频/中频和 RFID 射频放大器

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). • High allowable power dissipation. Applications • DC

Isolated 15-bit A/D Converter

Description The HCPL-7860/HCPL-786J Optically Isolated Modulator and HCPL-0872 Digital Interface IC or digital filter together form an isolated programmable two-chip analog-to-digital converter. The isolated modulator allows direct measurement of motor phase currents in power inverters. Fe

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual SchottkyBarrier Power Rectifiers 8 AMPERES 70-100 VOLTS Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowv

Switchmode Full Plastic Dual Ultrafast Power Rectifiers

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