Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual SchottkyBarrier Power Rectifiers 8 AMPERES 70-100 VOLTS Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowv

Double-Ended Cordsets

BCC M415-M414-3A-304-PW3434-010 Basic features Application Welding area Approval/Conformity CE cULus WEEE

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). • High allowable power dissipation. Applications • DC

Isolated 15-bit A/D Converter

Description The HCPL-7860/HCPL-786J Optically Isolated Modulator and HCPL-0872 Digital Interface IC or digital filter together form an isolated programmable two-chip analog-to-digital converter. The isolated modulator allows direct measurement of motor phase currents in power inverters. Fe

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this freq

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block above 0.5 GHz and can be used as a high gain transistor below this freque