Description

The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial and military applications.

The MSA-series is fabricated using Avago’s 10 GHz f,T 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Features

• Usable Gain to 6.0 GHz

• High Gain:

32.5 dB Typical at 0.1 GHz

23.5 dB Typical at 1.0 GHz

• Low Noise Figure: 3.0 dB Typical at 1.0 GHz

• Hermetic Gold-ceramic Microstrip Package