RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

865-900 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applicati

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 66V 880MHZ NI-860C3 分立半导体产品 晶体管 - FET，MOSFET - 射频

880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET

880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications i

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：501.94 Kbytes Page：12 Pages