865-900 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 Volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01 Probability on CCDF.

Power Gain — 20 dB

Drain Efficiency — 30

ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 350 Watts CW Output Power (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

• Typical Pout @ 1 dB Compression Point 220 Watts CW

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Device Designed for Push-Pull Operation Only

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.