位置：首页 > IC中文资料第2262页 > MRFE6P3300HR5
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRFE6P3300HR5 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt ana | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRFE6P3300HR5 | 封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 66V 863MHZ NI-860C3 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) 470-860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 vol | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor 文件：1.0063 Mbytes Page：24 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRFE6P3300HR5产品属性
- 类型
描述
- 型号
MRFE6P3300HR5
- 功能描述
射频MOSFET电源晶体管 HV6 900MHZ 300W NI860ML
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NA |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
FREESCALE |
25+ |
TO-63 |
880000 |
明嘉莱只做原装正品现货 |
|||
Freescale |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
FREESCALE |
24+ |
290 |
现货供应 |
||||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCALE/飞思卡尔 |
2450+ |
TO-63 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
恩XP |
22+ |
NI860C3 |
9000 |
原厂渠道,现货配单 |
|||
FSL |
25+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
恩XP |
25+ |
NI-860C3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
FREESCALE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
MRFE6P3300HR5规格书下载地址
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