RF Power Field Effect Transistor

The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal,

880 MHz, 200 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET

RF Power Field Effect Transistor

The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal,

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 65V 880MHZ 860C3 分立半导体产品 晶体管 - FET，MOSFET - 射频

880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET

FET RF 65V 880MHZ 860C3

封装/外壳：NI-860C3 包装：卷带（TR） 描述：FET RF 65V 880MHZ 860C3 分立半导体产品 晶体管 - FET，MOSFET - 射频

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

Miniature Force Sensor for mold cavity pressure with diameter ø3.5 mm

Drive Fasteners

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ACCEPTS 16,18 or 20 PIN WIDE S.O.I.C. BUILD PLUG-IN TEST CIRCUITS AND MODULES

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