The RF MOSFET Line

RF Power Field Effect Transistor

N- Channel Enhancement - Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier

applications in 26 volt base station equipment.

• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ= 2 x 950 mA IS- 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power ó 40 Watts

Power Gain ó 16.5 dB

Efficiency ó 25.5

Adjacent Channel Power ó

750 kHz: - 46.2 dBc @ 30 kHz BW

1.98 MHz: - 60 dBc @ 30 kHz BW

• Internally Matched, Controlled Q, for Ease of Use

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts Avg. N- CDMA

• Excellent Thermal Stability

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.