位置：首页 > IC中文资料第696页 > MRF9060L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF9060L | 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs | ETC 知名厂家 | ETC |   |
RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applicati | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applicati | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：364.72 Kbytes Page：11 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：364.72 Kbytes Page：11 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 65V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-360S 包装：散装 描述：FET RF 65V 945MHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
SHIELDED ADJUSTABLE RF COILS [J.W.MILLER] | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
INSULATED PC SPACERS/SUPPORTS 文件：100.21 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | Heyco | | ||
Nytye® Push Rivets 文件：100.54 Kbytes Page：1 Pages | Heyco | | ||
Nylon PCB Supports - Rivet Mount 文件：82.18 Kbytes Page：1 Pages | Heyco | |
MRF9060L产品属性
- 类型
描述
- 型号
MRF9060L
- 功能描述
射频MOSFET电源晶体管 60W 1GHZ RFPWR FET NI360
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
23+ |
原厂原包封装 |
20000 |
全新原装假一赔十 |
|||
MOTOROLA |
24+ |
MODL |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
FREESCALE |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
恩XP |
22+ |
NI360 Short Lead |
9000 |
原厂渠道,现货配单 |
|||
FREESCALE |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
Freescale(飞思卡尔) |
24+ |
标准封装 |
6913 |
我们只是原厂的搬运工 |
|||
Freescale |
25+23+ |
NI-360 |
27983 |
绝对原装正品全新进口深圳现货 |
|||
FREESCA |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
- |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
Freescale |
23+ |
高频管 |
1520 |
专营高频管模块,全新原装! |
MRF9060L规格书下载地址
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