位置：首页 > IC中文资料第11994页 > MRF8S7170N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF8S7170N | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 728-768 MHz, 50 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: V | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF8S7170N | 728-768 MHz，50 W平均值，28 V单载波W-CDMA射频功率LDMOS | ETC 知名厂家 | ETC | |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 728-768 MHz, 50 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: V | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：OM-780-2 包装：管件 描述：FET RF 70V 748MHZ OM780-2 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF8S7170N产品属性
- 类型
描述
- 型号
MRF8S7170N
- 制造商
FREESCALE
- 制造商全称
Freescale Semiconductor, Inc
- 功能描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FLS |
23+ |
SMD |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
恩XP |
24+ |
N/A |
230 |
原装原装原装 |
|||
FREESCALE |
25+ |
SMD |
492 |
只做原装进口!正品支持实单! |
|||
恩XP |
24+ |
NXP |
6600 |
只有进口原装 价格优势 有挂就有货 |
|||
FREESCALE |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
FREESCALE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
Freescale(飞思卡尔) |
24+ |
标准封装 |
12163 |
我们只是原厂的搬运工 |
|||
FREESCALE |
22+ |
OM-780-2 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
FLS |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
22+ |
OM7802 |
9000 |
原厂渠道,现货配单 |
MRF8S7170N规格书下载地址
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