RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrie

1930-1990 MHz，74 W平均值，30 V单载波W-CDMA射频功率LDMOS

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrie

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrie

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 74 W Avg., 30 V

封装/外壳：SOT-1110B 包装：管件 描述：FET RF 2CH 65V 1.99GHZ NI1230S-8 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-1110B 包装：管件 描述：FET RF 2CH 65V 1.99GHZ NI1230S-8 分立半导体产品 晶体管 - FET，MOSFET - 射频