位置：首页 > IC中文资料第2068页 > MRF8P8300HS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF8P8300HS | Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V | ETC 知名厂家 | ETC |   |
RF Power Field Effect Transistors RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W-- | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | | |
封装/外壳：NI-1230S 包装：散装 描述：FET RF 2CH 70V 820MHZ NI1230S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-1230S 包装：散装 描述：FET RF 2CH 70V 820MHZ NI1230S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode Lateral MOSFET | ETC 知名厂家 | ETC | |
MRF8P8300HS产品属性
- 类型
描述
- 型号
MRF8P8300HS
- 功能描述
射频MOSFET电源晶体管 HV8-800 28V NI1230HS
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
19+ |
TO-59 |
6720 |
只做原装正品 |
|||
FREESCALE |
24+ |
NA/ |
17 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
飞思卡尔 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
恩XP |
23+ |
NI1230S |
8000 |
只做原装现货 |
|||
FREESCALE |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
恩XP |
24+ |
SMD |
39500 |
进口原装现货 支持实单价优 |
|||
恩XP |
22+ |
NI1230S |
9000 |
原厂渠道,现货配单 |
|||
恩XP |
2450+ |
SMD |
9850 |
只做原装正品现货或订货假一赔十! |
MRF8P8300HS规格书下载地址
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