NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application. FEATURES: • Internal Input Matching Network • PG = 7.5 dB at 30 W/960 MHz • Omnigold™ Metalization Sys

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 24 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 804–960 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Power Gain =

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application. FEATURES: • Internal Input Matching Network • PG = 7.5 dB at 30 W/960 MHz • Omnigold™ Metalization System • T

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application.FEATURES:\n• Internal Input Matching Network\n• PG = 7.5 dB at 30 W/960 MHz\n• Omnigold™ Metalization System\

Bipolar Transistor

RF POWER TRANSISTOR NPN SILICON

2A, Current-Limited, High-Side P-Channel Switch with Thermal Shutdown

General Description The MAX869L P-channel load switch features an accurate user-set current limit and low on-resistance. This switch is designed to protect your power source from shorts and surges by limiting current and preventing the system supply from being pulled low. The input voltage rang

Integrated Circuit Low Noise Operational Amplifier

Description: The NTE891M and NTE891SM are single, high–performance, low noise operational amplifiers. Compared to other operational amplifier, these devices show better noise performance, improved output drive capability and considerably higher small–signal and power bandwidths. This makes the d

Integrated Circuit Low Noise Operational Amplifier

Description: The NTE891M and NTE891SM are single, high–performance, low noise operational amplifiers. Compared to other operational amplifier, these devices show better noise performance, improved output drive capability and considerably higher small–signal and power bandwidths. This makes the d

Integrated Circuit Low Noise Operational Amplifier

Description: The NTE891M and NTE891SM are single, high–performance, low noise operational amplifiers. Compared to other operational amplifier, these devices show better noise performance, improved output drive capability and considerably higher small–signal and power bandwidths. This makes the d