NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

NPN Silicon RF Power Transistor

857 Series High Temp Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

General Purpose Transistor

Features - For AF input stages and driver applications. - High current gain. - Low collector-emitter saturation voltage. - Low noise between 30Hz and 15kHz. - AEC-Q101 Qualified.

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

boxes and ancillary products

文件：3.51246 Mbytes Page：5 Pages