The RF Line

NPN Silicon RF Power Transistor

Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz.

• Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics

Output Power = 2.1 Watts CW

Minimum Power Gain = 12.5 dB

Minimum ITO = +43 dBm

Typical Noise Figure = 5.25 dB

• Characterized with Small–Signal S–Parameters and Series Equivalent

Large–Signal Parameters from 800–960 MHz

• Silicon Nitride Passivated

• 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1

VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power

• Will Withstand RF Input Overdrive of 0.4 W CW

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.